A double-barrier magnetic tunnel junction (DMTJ) comprising an amorphous freelayer was investigated. The typical sample structure consists of Ta42∕CoZrNb9.2∕IrMn15.5∕CoFe3.3∕AlOx2∕freelayer∕AlOx2∕CoFe7.5∕IrMn15.5∕Ru60(nm). The freelayer includes CoFe2.3∕CoZrNb3.4∕CoFe3. A CoFe 5nm single freelayer was also prepared for reference purpose. Although TMR ratio and RA product appear similar, less attenuation in the TMR ratio was observed at 0.4V for the junction with CoZrNb layer. Coercivity and interlayer coupling were reduced while squareness was improved. The top portion of the DMTJ including top barrier became more uniform after amorphous layer insertion.
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Song et al. (2005) studied this question.
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