Low Temperature Growth of GaAs on Si Substrate by Chemical Beam Epitaxy

We report on the growth of GaAs on Si substrates without a high temperature process over 500°C using chemical beam epitaxy (CBE). First, the epilayer grown on Si was preheated for 5 min at 400, 500 and 600°C, respectively, and it was found that the preheating at 500°C was sufficient to remove an oxide on the Si surface. The dependence of the surface morphology on the growth condition during the nucleation stage was investigated. As a result, it was found that a high growth rate and a high V/III ratio in the initial stage are required to grow high-quality GaAs on a Si substrate, and the quality of GaAs on Si grown in this research was better than that grown by metalorganic chemical vapor deposition.