Dynamic reflectance anisotropy (RA) and simultaneous reflection high-energy electron diffraction intensity measurements on the gas source molecular-beam-epitaxy growth of Si and SiGe on Si(001) are presented for the first time. The RA signal was found to oscillate at a period corresponding to bilayer growth in both material systems, and it is explained in terms of a model based on the relative domain coverages and hence the Si dimer ``concentration'' in the two orthogonal $〈110〉$ azimuths.
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Turner et al. (1995) studied this question.
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