Dynamic observation of Si crystal growth on a Si(111)7×7 surface by high-temperature scanning tunneling microscopy

The dynamic process of Si crystal growth on a Si(111)7×{}7 surface was studied in situ using high-temperature scanning tunneling microscopy. Si was evaporated onto a Si(111)7×{}7 surface, kept at 350 ^∘{}C, and the crystal growth was observed. The step-flow growth was observed as the appearance of new adatoms at the step edge. The [112{}] steps became jagged with [1{} 1{} 2] steps. At the [1{} 1{} 2] steps, new adatoms appeared in rows along the step edges.