Strained-layer InGaAs/GaInAsP/GaInP quantum well lasers grown by gas-source molecular beam epitaxy

We demonstrate the first strained-layer InGaAs/GaInAsP/GaInP separated confinement heterostructure multiple quantum well lasers which emit at a wavelength of 0.98 μm. These lasers, grown by gas-source molecular beam epitaxy, exhibit a low threshold current density of 169 A/cm2 and high characteristic temperatures of 235 K for a cavity length of 1200 μm. The internal waveguide loss and internal quantum efficiency are 5.0 cm−1 and 83%, respectively. Single mode continuous wave operation is found up to an output power of 25 mW per facet at room temperature for an uncoated 5.5 μm×800 μm ridge waveguide laser.