Dynamics of a band-edge transition in GaN grown by molecular beam epitaxy

Time-resolved photoluminescence spectroscopy has been used to probe the dynamics of optical transitions in GaN epitaxial layers grown by molecular beam epitaxy. In particular, systematic measurements on a band-edge transition at about 3.42 eV have been carried out. Recombination lifetimes of this transition have been measured at different emission energies. Our results clearly show that the time-resolved photoluminescence can provide immense value in the understanding of the dynamic processes of optical transitions in GaN.