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Copper phthalocyanine film, a p-type organic semiconductor, is synthesized by vacuum sublimation and its surface morphology is characterized by SEM. A silicon-based copper phthalocyanine film gas sensor for NO 2 detection is fabricated by MEMS technology. The results show that the resistance and sensitivity of copper phthalocyanine film decrease obviously as the NO 2 concentration increases from 0 ppm to 100ppm. However, the sensitivity nearly keeps a constant of 0.158 between 30 ppm and 70 ppm. The best working temperature of the gas sensor is 90° G for NO 2 gas concentrations of 10 ppm, 20 ppm and 30 ppm, which is much lower than that of general metal oxide gas sensor.
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Qiu et al. (2008) studied this question.
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