The tunneling characteristics of metal contacts on n-CdTe have been measured. Both the forward- and reverse-bias characteristics are in good agreement with the two-band model for the energy-complex-momentum relationship. The presence of trapping states increased the magnitude of the tunneling current at low levels by providing a two-step transition. The slope of the forward-bias logₑJ-versus-V curves for tunneling through the intermediate states was reduced by a factor of 2.
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Parker et al. (1969) studied this question.
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