Formation and Prevention of Micropipes and Voids in CVD Carbonization Experiments on (100) Silicon

Silicon carbide carbonization layers were grown on (100) silicon substrates at intermediate pressures and comperatively low propane concentrations in hydrogen by application of a slow temperature ramp. Scanning and transmission electron microscopy (SEM and TEM) studies of the SiC/Si interfaces revealed pyramidal voids and micropipes, only voids or none of these Si out-diffusion defects depending on the specific CVD parameters. (orig.) 8 refs.