The behavior of the F− interstitial in BaF2 crystals has been examined using ionic-conductivity measurements on BaF2 crystals doped with various amounts of GdF3. The interstitial mobility was found to be μ = (4 × 103 / T) exp(−0.79 ± 0.03 / kT), and the association energy between the Gd3+ ion and the interstitial was 0.44 ± 0.04 eV. Very similar results were obtained for BaF2 doped with monovalents halides. A detailed comparison between the present work, dielectric and anelastic loss measurements, and NMR studies has been made.
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Barsis et al. (1968) studied this question.
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