The electrical degradation and relaxation behaviors of Ho-doped BaTiO 3 with excess BaO have been studied in terms of oxygen vacancy concentration, leakage current, microstructure and thermally stimulated depolarization current (TSDC). Within the solubility limit (∼3.0 mol %), Ho 3+ ions effectively increased the number of oxygen vacancies in Ba(Ti 1- x Ho x )O 3-0.5 x . Leakage current increased with Ho content and the highest leakage current appeared in Ba(Ti 0.98 Ho 0.02 )O 2.99 . The oxygen vacancy mobility in Ho-doped BaTiO 3 specimens was significantly increased compared with that in undoped BaTiO 3 . The TSDC in Ba(Ti 1- x Ho x )O 3-0.5 x increased with Ho content and the highest TSDC peak occurred at the specimen with 2.0 mol % Ho. The activation energies for depolarization current related to the motion of oxygen vacancies in Ba(Ti 1- x Ho x )O 3-0.5 x were calculated to be 0.60–0.64 eV.
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Jeong et al. (2006) studied this question.
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