The contact between a high- T c superconductor of Er-Ba-Cu-O and a semiconductor of niobium-doped SrTiO 3 has been examined by current-voltage measurements. The rectifying characteristic has been observed at 277 K for a sample with niobium-0.05wt%-doped SrTiO 3 . The breakdown voltage decreases with decreasing temperature or increasing niobium impurity concentration, and the temperature dependence of the breakdown voltage becomes more gradual with increasing niobium impurity concentration.
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Hasegawa et al. (1989) studied this question.
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