Analysis of Origin of Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO2 Gate Stacks, Manabe, Kenzo, Takahashi, Kensuke, Hase, Takashi, Ikarashi, Nobuyuki, Oshida, Makiko, Tatsumi, Toru, Watanabe, Hirohito, Watanabe, Heiji, Yasutake, Kiyoshi
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Manabe et al. (2006) studied this question.
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