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Due to the an increase in pattern densities and wafer diameters, it is extremely difficult for wet chemical processing to perform complete cleaning, rinsing and drying for highly rugged surface of very fine pattern ULSI devices. IPA Vapor Drying is a widely used drying method in semiconductor manufacturing. As IPA has low surface tension and very high solubility to water, it is suitable for IPA vapor process to perfectly eliminate contamination of the wafer surface. This drying system also has an ability to eliminate static charge and can essentially achieve the high quality of the surface cleanliness. Therefore, the mechanism of static charge removal was studied using a quantitative method for the direct measurement of static charge.>
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Ohmi et al. (1994) studied this question.
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