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January 1, 2007Journal of The Electrochemical Society

Effects of Gate-Recess Structure on High-Frequency Characteristics of 0.1 μm Metamorphic HEMTs

Jung‐Hun Oh Yong‐Hyun Baek Byeong-Ok Lim Sung‐Woon Moon Sang-Jin Lee Jin‐Koo Rhee In-Seok Hwang Sam-Dong Kim

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Abstract

Effects of Gate-Recess Structure on High-Frequency Characteristics of 0.1 μm Metamorphic HEMTs, Oh, Jung-Hun, Baek, Yong-Hyun, Lim, Byeong-Ok, Moon, Sung-Woon, Lee, Sang-Jin, Rhee, Jin-Koo, Hwang, In-Seok, Kim, Sam-Dong

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Oh et al. (2007) studied this question.

synapsesocial.com/papers/6a83b750448cdc0007ee7976 https://doi.org/10.1149/1.2732184

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