Determination of the electron saturation velocity in pseudomorphic Al/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/As MODFETs at 300 and 100 K

An improved method for determining the specific electron saturation velocity by DC on-wafer measurements is introduced that increases the reliability of the measured values at cryogenic temperatures and especially at room temperature. The method determines the specific material and structural electron saturation velocity and also gives information about the properties of the device fabrication process such as the gate-length-dependent recess depth. The electron saturation velocity of pseudomorphic InGaAs/GaAs MODFETs was extracted at both room temperature and cryogenic temperature. These values are compared to values obtained from f/sub T/ measurements. The authors obtained electron saturation velocity values of 1.59*10/sup 7/ cm/s at 300 K and 1.83 *10/sup 7/ cm/s at 100 K.>