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Theoretical calculations have been developed for a two-dimensional electron gas FET (TEGFET) constituted by a AlGaAs (n)-GaAs (n-or p-) heterostructure in which the Schottky gate is deposited on the AlGaAs(n) top layer. The theory takes into account: i) the subband splitting in the two-dimensional electron gas (2-DEG); and ii) the existence of an undoped AlGaAs spacer layer which has been found to enhance the electron mobility. The sheet carrier concentration of the TEGFET has been calculated, and a simple analytical formula has been established for the charge control in large and small gate FET.
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Delagebeaudeuf et al. (1982) studied this question.
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