We present the scaling properties of an idealized HEMT structure at 300 K. A two-dimensional device model based on three moments of the Boltzmann equation is used to investigate a constant voltage scaling scheme. Detailed results are presented for gate lengths of 2.0, 1.33, 1.0, 0.67, and 0.50 µm.
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Kizilyalli et al. (1986) studied this question.
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