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A carrier‐concentration‐dependent low‐field‐mobility model for a lattice‐matched InAlAs/InGaAs/InP HEMT for microwave frequency applications is developed. The dependence of mobility on carrier concentration affects the current–voltage characteristics, and also the gate–voltage dependence of transconductance. An approximation for the two‐dimensional electron gas (2‐DEG) concentration versus the gate‐to‐channel voltage, which models both the subthreshold region and the gradual saturation of carriers, due to the onset of charge modulation, has been used. The model also evaluates the cutoff frequency as a function of gate length, and a value of 203 GHz is obtained.
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Jogi et al. (2001) studied this question.
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