Field-induced resistive switching of (Ba0.6Sr0.4)TiO3 thin films based on switching of conducting domains model

Field-induced bipolar resistive switching (RS) properties were obtained in both epitaxially and nonepitaxially grown (Ba0.6Sr0.4)TiO3 (BSTO) thin films on Ir electrode. Results inferred that conducting domains were formed during the “forming” process, and the switching of conducting domains led to the RS process. And results showed that epitaxially grown BSTO (E-BSTO) thin film had higher resistance switching ratio than that of non-epitaxially grown BSTO (NE-BSTO) thin film, which was mainly resulted from the Poole-Frenkel emission, more and thinner conducting domains of E-BSTO thin film.