Resonant tunneling devices based word memory cell

A new scheme for storing a word-wide multibit information very efficiently in a single memory cell using resonant-tunneling diodes (RTDs) is proposed. The proposed cell takes advantages of the folding I-V characteristics of RTD. An efficient and inexpensive periphery circuit to read from and write into the cell is also described. Simulation results on the design of a 3-b memory cell scheme using one-peak RTD's are presented here.