MOSFETs and MOS capacitors with ultrathin (65 AA) low-pressure chemical vapor deposition (LPCVD) gate SiO/sub 2/ have been fabricated and compared to those with thermal SiO/sub 2/ of identical thickness. Results show that the devices with LPCVD SiO/sub 2/ have higher transconductance and current drivability, better channel hot-carrier immunity, lower defect density, and better time-dependent dielectric breakdown (TDDB) characteristics than devices with conventional thermal SiO/sub 2/.>
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Ahn et al. (1992) studied this question.
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