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March 1, 1992Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Near band-edge photoluminescence from Si1−xGex/Si superlattices grown by molecular-beam epitaxy

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Authors

TST. SteinerUnited States Air Force Office of Scientific ResearchRHR. L. HengeholdU.S. Air Force Institute of TechnologyYYY. K. YeoU.S. Air Force Institute of Technology

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Steiner et al. (1992) studied this question.

synapsesocial.com/papers/6a83ea8d8dcee831255bd4cdhttps://doi.org/10.1116/1.586155
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