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October 1, 1993Japanese Journal of Applied PhysicsOpen Access

Band-Edge Photoluminescence of SiGe/Strained-Si/SiGe Type-II Quantum Wells on Si(100)

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DNDeepak Kumar NayakBudge Budge Institute of TechnologyNUNoritaka UsamiInstitute for SustainabilityHSH. SunamuraThe University of Tokyo

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Nayak et al. (1993) studied this question.

synapsesocial.com/papers/6a83eae0b6624d51e2fe1a7ehttps://doi.org/10.1143/jjap.32.l1391
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  4. 4Spectral blue shift of photoluminescence in strained-layer Si1−<i>x</i>Ge<i>x</i>/Si quantum well structures grown by gas-source Si molecular beam epitaxy1992 · 73 citations
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