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August 12, 1991Applied Physics Letters

Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates

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Authors

EFEugene A. FitzgeraldMassachusetts Institute of TechnologyYXY. H. XieHangzhou Dianzi UniversityMGM. L. GreenAT&T (United States)

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Fitzgerald et al. (1991) studied this question.

synapsesocial.com/papers/6a835308ad87dfbb90a6e97dhttps://doi.org/10.1063/1.105351
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