Solid-phase heteroepitaxy of Ge on 〈100〉Si

Heteroepitaxial Ge films have been obtained by solid-phase crystallization of amorphous Ge deposited on single-crystal 〈100〉Si substrates. The substrates were chemically cleaned by conventional procedures without any attempt to achieve atomically clean surfaces. The as-crystallized Ge films contain dislocations and twins. Reduction in twin density has been achieved by using an ion implantation and reannealing treatment. Epitaxial GaAs layers of good crystal quality have been grown by chemical vapor deposition on heteroepitaxial Ge films subjected to this treatment.