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January 1, 1980Applied Physics Letters

Evidence for void interconnection in evaporated amorphous silicon from epitaxial crystallization measurements

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JBJ. C. BeanStevens Institute of TechnologyJPJ. M. PoateColorado School of Mines

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Bean et al. (1980) studied this question.

synapsesocial.com/papers/6a1c7fc82cc291e7bf2fdf48https://doi.org/10.1063/1.91316
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