Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 15, 1990Applied Physics Letters

Photoluminescence studies of Si (100) doped with low-energy (100–1000 eV) B+ ions during molecular beam epitaxy

View Full Paper
Ask AI
Bookmark
Share

Authors

JNJ.-P. NoëlNational Research Council CanadaJGJ. E. GreeneNational Taiwan University of Science and TechnologyNRN. L. RowellCentre National de la Recherche Scientifique

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Noël et al. (1990) studied this question.

synapsesocial.com/papers/6a83eb06d65172829ee66a08https://doi.org/10.1063/1.102804
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Set of five related photoluminescence defects in silicon formed through nitrogen-carbon interactions1987 · 26 citations
  2. 2Ion Beam Doping of MBE Silicon by As+1988 · 9 citations
  3. 3Annealing studies of highly doped boron superlattices1989 · 23 citations
  4. 4I n s i t u doping by As ion implantation of silicon grown by molecular-beam epitaxy1988 · 14 citations
  5. 5New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and Germanium1967 · 374 citations