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November 20, 2002International Journal of Modern Physics B

TEMPERATURE DEPENDENCE OF PHOTOLUMINESCENCE OF FLAT AND UNDULATED SiGe/Si MULTIPLE QUANTUM WELLS

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Authors

BCBuwen ChengChinese Academy of SciencesJZJianguo ZhangInstitute of ArtYZYuhua ZuoJinggangshan University

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Cheng et al. (2002) studied this question.

synapsesocial.com/papers/6a83eb39d65172829ee66a11https://doi.org/10.1142/s0217979202015108
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1UHV/CVD growth of Si and Si:Ge alloys: chemistry, physics, and device applications1992 · 184 citations
  2. 2Observation of vertical and lateral Ge segregation in thin undulating SiGe layers on Si by electron energy-loss spectroscopy1997 · 87 citations
  3. 3Photoluminescence of Si-rich Si-Ge alloys1982 · 54 citations
  4. 4Photoluminescence from electron-hole plasmas confined in Si/Si1−xGex/Si quantum wells1992 · 60 citations
  5. 5Optical investigation of interwell coupling in strained Si1−xGex/Si quantum wells1993 · 41 citations