Fine Structure of the Luminescence from Excitons and Multiexciton Complexes Bound to Acceptors in Si

My high-resolution studies of the bound-exciton luminescence in Ga-doped Si reveal a triplet structure. Also, I report for the first time bound multiexciton complexes associated with Ga, which are similar to those previously reported for Si doped with P, Li, and and B. In the case of Ga, however, the $m=2$ bound-multiexciton complex luminescence is found to be split by an amount equal to the splitting between two of the bound-exciton lines, strongly suggesting that the $m=2$ complex decays into the bound exciton.