Electroluminescence from sulfur impurities in a p-n junction formed in epitaxial silicon

We characterize the behavior of electroluminescence from a sulfur-related impurity complex in a p-n junction formed in epitaxial silicon. The spectrum of the electroluminescence matches that of previously reported photoluminescence from sulfur impurities and persists to ∼150 K. In our structure, we find that the electroluminescence exhibits an external quantum efficiency of 0.2–0.5%.