A SiGe three-terminal hot-hole transistor using a double-barrier resonant tunneling structure as an emitter is fabricated. Injected carriers from the emitter are transferred near-ballistically into the collector through a thin base. The demonstrated main feature of the device is a controllable negative differential resistance in the collector current. Utilizing the high-speed characteristics of the tunneling process and negative differential resistance, integration of the device into Si technology could find applications in the areas of high-speed digital circuits, frequency multipliers, and tunable oscillators/amplifiers.
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Rhee et al. (1990) studied this question.
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