A finite-element method for the analysis of eigenstates in a quantum well, which is based on the Galerkin procedure, is discussed. A general boundary condition of the envelope function at the heterointerface is introduced by using the transfer matrix. The validity of the method is confirmed by calculating the eigenstates of GaAs/AlGaAs and InAs/GaSb rectangular quantum wells. Numerical examples of voltage-applied quantum wells are presented.
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Nakamura et al. (1989) studied this question.
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