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We present a direct measurement of the birefringence induced by the intersubband transitions in quantum wells. Phase delays of up to 40° were observed in our samples, corresponding to a 0.07 difference in the index of refraction between the polarizations parallel and perpendicular to the plane of the wells in a GaAs/AlGaAs silicon-doped structure. The measurement was conducted at several wavelengths—enabling us to deduce the total linear birefringence near the absorption resonance. The observed birefringence is in close agreement with the Kramers–Kronig transform of the absorption spectra.
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Almogy et al. (1993) studied this question.
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