The changes in the real index of refraction and the optical absorption for conduction intersubband transitions in AlxGa1−xAs/GaAs/AlxGa1−xAs quantum wells are examined as a function of the carrier density. Various values for the input optical field and quantum well width are considered in the calculations. The linear contribution due to χ(1) as well as the nonlinear contribution from χ(3) is included. The relationship of the results to device applications such as waveguides and optical modulators is discussed.
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Kuhn et al. (1991) studied this question.
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