keV particle bombardment of semiconductors: A molecular-dynamics simulation

Molecular-dynamics simulations have been performed for the keV particle bombardment of Si{110} and Si{100} using a many-body potential developed by Tersoff. Energy and angle distributions are presented along with an analysis of the important ejection mechanisms. We have developed a computer logic that only integrates the equations of motion of the atoms that are struck, thus decreasing the computer time by a factor of 3 from a complete molecular-dynamics simulation.