Modelling of crosstalk among the GaAs-based VLSI interconnections

We have developed a computer-efficient model and carried out computer simulations of the crosstalk effects in the single-, bi- and trilevel high-density interconnections on the GaAs-based VHSIC. The self and coupling interconnection capacitances used in the model have been determined by a network analogue method developed for the finite-length interconnections, open substrates and finite dimensions of the bottom ground plane, as well as by the method of moments in conjunction with a Green's function appropriate for the geometry of the interconnections. The Green's function was obtained by using the method of multiple images. The results include the fringing fields, as well as the shielding by the neighbouring interconnections. Related software modules have been developed and run successfully on the mainframe computers. For a given set of the interconnection dimensions and other parameters, the algorithm takes less than 5 minutes of the computer processing time on a mainframe computer. The modules have been used to study the dependences of the crosstalk voltage on the interconnection dimensions such as their lengths, widths, separations and the interlevel distances. Dependence of the crosstalk signal on other parameters such as the driving transistor resistance and the load capacitance has also been investigated. The results can be utilised to obtain optimum values for the various interconnection parameters for minimum crosstalk.