An integrated GaAs n-p-n-p thyristor/JFET memory cell exhibiting nondestructive read

An integrated GaAs n-p-n-p thyristor-junction field effect transistor (JFET) structure displays memory by storing charge on the thyristor reverse-biased junctions. The device can be electrically programmed and erased through a single terminal. A buried p-channel, which also functions as the thyristor anode, is used to read stored charge nondestructively over a small range of applied drain voltages (+or-1.5 V). Measured storage times exceeded 10 s at room temperature with an activation energy of approximately 0.6 eV.>