The physics of a new GaAs/AlGaAs floating-gate memory device is investigated. Long electron storage times (e.g., 4 h at 140 K) have been measured and linked to the indirect nature of the GaAs-AlAs conduction-band discontinuity. A simple analysis of the structure shows that scattering-assisted tunneling processes and band-structure effects, not included in standard thermionic emission theories, must be considered to properly account for the observed long retention times.
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Beltram et al. (1988) studied this question.
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