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Photoresponse measurements of the Schottky barrier heights of epitaxial NiSi2 layers on nondegenerate n-(111) Si, for type-A and type-B orientations, have been performed. The type-A and type-B cases are consistently observed to differ in barrier height by greater than 0.1 eV. We obtain measured values for φB0 (at T=300 K) of 0.62±0.01 eV and 0.77±0.05 eV for type A and B, respectively.
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Hauenstein et al. (1985) studied this question.
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