We investigated the electrical characteristics of thin aluminum films, deposited using the newly developed partially ionized beam deposition technique on single-crystal silicon substrates. The occurrence of an n-type surface layer on an otherwise p-type substrate was observed in samples of ultrathin films (10–50 Å). The presence of this ‘‘inversion’’ layer was found to be a strong function of deposition conditions, substrate resistivity, and thickness of the aluminum overlayers.
No takes yet. Share an insight, caveat, or question.
Srinivasan et al. (1989) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:
More from Journal of Applied Physics