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September 1, 1964IBM Journal of Research and Development

Space-Charge Model for Surface Potential Shifts in Silicon Passivated with Thin Insulating Layers

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Authors

JTJ. E. ThomasPublic Service Electric and Gas (United States)DYDonald R. YoungVirginia Commonwealth University

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Thomas et al. (1964) studied this question.

synapsesocial.com/papers/6a90dcf45730a89ab2cae3f3https://doi.org/10.1147/rd.84.0368
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Evidence for Oxidation Growth at the Oxide-Silicon Interface from Controlled Etch Studies1964 · 85 citations
  2. 2Review of Germanium Surface Phenomena1956 · 176 citations
  3. 3Effect of an Electric Field on Silicon Oxidation1962 · 190 citations
  4. 4Surface States and Rectification at a Metal Semi-Conductor Contact1947 · 2,184 citations
  5. 5The Temperature Dependence of the Drift Mobility of Injected Holes in Germanium1954 · 12 citations