Application of high‐rate E×B or magnetron sputtering in the metallization of semiconductor devices

High‐rate sputtering has been investigated as a useful method of depositing aluminum and aluminum‐alloy metallization on semiconductor devices. Although the deposition rate is not as high as typical electron‐beam systems, it is still competititve and the added ease of controlling film uniformity and composition by sputtering power and target selection make it very attractive. Furthermore, in contrast to conventional diode sputtering, the radiation bombardment of the substrate by the plasma is reduced significantly which results in a minimum of self‐induced heating and charges in dielectric layers. Although this low temperature may not be conducive to ideal conductor step coverage, the ease of, and relatively low temperature for, annealing the radiation damage shows it can be a viable method for conductor metallization of bipolar and MOS devices.