The resistivities of Pd, Pt, Rh, and Ni silicide layers on Si crystals are studied as a function of temperature and duration of heat treatment, using the four-point probe technique. It is found that the resistivities of thin silicide films differ appreciably from published bulk resistivities. Increased annealing of a formed silicide decreases the silicide resistivity, probably as a result of increased grain size. The thickness of the metal layers as well as that of the formed silicide films and their compositions are determined using backscattering analysis.
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Petersson et al. (1976) studied this question.
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