Strong Damping-Like Torques in Wafer-Scale MoTe2 Grown by MOCVD

The scalable synthesis of materials with strong spin orbit coupling (SOC) is crucial for the development of spintronic and magnetic devices. Here, wafer-scale growth of 1T′ MoTe 2 using metal–organic chemical vapor deposition (MOCVD) at low temperatures (400 °C) is demonstrated. The synthesized films exhibit uniform coverage across the entire substrate, as well as accurate stoichiometry. This low-temperature synthesis is compatible with silicon back-end-of-line (BEOL) processes, enabling in-memory and in-sensor computing for data-intensive applications. Furthermore, it was found that the grown 1T′ MoTe 2 exhibits strong spin–orbit coupling, as revealed by the spin torque ferromagnetic resonance (ST-FMR) measurements conducted on a 1T′ MoTe 2 /permalloy bilayer. These measurements indicate significant damping-like torques in the wafer-scale 1T′ MoTe 2 film and indicate high spin-charge conversion efficiency. The BEOL-compatible process and potent spin orbit torque demonstrate the promise of MOCVD-grown MoTe 2 in advanced device applications.