New fabrication processes for selfaligned amorphous silicon TFTs are proposed. The TFTs have a polysilicon source and drain which are formed by ArF excimer laser annealing. They exhibit a field-effect mobility of 0.8 cm2/Vs, threshold voltage of 11 V, and on/off current ratio of higher than 106.
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Sugiura et al. (1993) studied this question.
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