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The hydrogen concentration and density of amorphous semiconducting films prepared by glow-discharge decomposition of silane have been measured as a function of deposition temperature. An inductively coupled as well as a capacitively coupled plasma-decomposition system was used. For samples prepared by the capacitively coupled system, the hydrogen content decreased from 26 to 8 at.% and the density increased from 1.9 to 2.27 g/cm3 as the substrate temperature was increased from 25 to 450 °C.
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Fritzsche et al. (1979) studied this question.
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