Several structures for amorphous Ge have been generated on a computer with procedures that are believed to approximate the true deposition process. All of the structures are characterized by rigid bond lengths and 8 to 10° bond angle distortions. The primary differences among the structures are in the distribution of the dihedral angles. For the most physically reasonable assumed deposition process, in which the dihedral angle are unconstrained, the resulting RDF of the cluster agrees best with the experimental RDF. It is shown that the continuous random network model for amorphous Ge can fit even the higher features of the experimental RDF.
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N. J. Shevchik (1973) studied this question.