A double layer of anodized TaO x and plasma CVD SiO x was applied to the gate insulator for an a-Si TFT active matrix LCD. This double layer was effective in eliminating interlayer short circuits between address bus lines and data bus lines in an LCD. No deterioration was observed in the TFT characteristics or the reliability upon adding a TaO x layer to a SiO x gate insulator. An LCD with no interlayer short circuits has been fabricated with this double layer.
No takes yet. Share an insight, caveat, or question.
Ikeda et al. (1987) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: