We report an InP/InGaAs/InP double heterojunction bipolar transistor fabricated in a triple-mesa structure, exhibiting simultaneous 404 GHz fτand 901 GHz fmax. The emitter and base contacts were defined by electron beam lithography with better than 10 nm resolution and smaller than 20 nm alignment error. The base-collector junction has been passivated by depositing a SiNxlayer prior to benzocyclobutene planarization, improving the open-base breakdown voltage BVCEOfrom 3.7 to 4.3 V.
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Rode et al. (2014) studied this question.
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